Invention Grant
- Patent Title: Method of manufacturing semiconductor devices, corresponding apparatus and semiconductor device
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Application No.: US17108187Application Date: 2020-12-01
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Publication No.: US11610849B2Publication Date: 2023-03-21
- Inventor: Paolo Crema
- Applicant: STMicroelectronics S.r.l.
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Agency: Crowe & Dunlevy
- Priority: IT102019000022641 20191202
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L21/56 ; H01L23/00 ; H01L23/31 ; H01L23/495
Abstract:
A leadframe has a die pad area and an outer layer of a first metal having a first oxidation potential. The leadframe is placed in contact with a solution containing a second metal having a second oxidation potential, the second oxidation potential being more negative than the first oxidation potential. Radiation energy is then applied to the die pad area of the leadframe contacted with the solution to cause a local increase in temperature of the leadframe. As a result of the temperature increase, a layer of said second metal is selectively provided at the die pad area of the leadframe by a galvanic displacement reaction. An oxidation of the outer layer of the leadframe is then performed to provide an enhancing layer which counters device package delamination.
Public/Granted literature
- US20210167022A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES, CORRESPONDING APPARATUS AND SEMICONDUCTOR DEVICE Public/Granted day:2021-06-03
Information query
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