Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
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Application No.: US17078599Application Date: 2020-10-23
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Publication No.: US11610873B2Publication Date: 2023-03-21
- Inventor: Ryo Goto , Takami Otsuki , Yasutaka Shimizu , Shingo Tomioka
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JPJP2020-020476 20200210
- Main IPC: H01L25/16
- IPC: H01L25/16 ; H01L23/00 ; H01L21/66

Abstract:
An object of the present disclosure is to provide a semiconductor device capable of confirming withstand voltage of a snubber circuit after providing the snubber circuit and a method of manufacturing the semiconductor device. A semiconductor device according to the present disclosure includes: an insulating substrate; a circuit patterns provided on the insulating substrate; a snubber circuit substrate provided on the insulating substrate separately from the circuit patterns; a resistance provided on one of the circuit patterns and the snubber circuit substrate; a capacitor provided on another one of the circuit patterns and the snubber circuit substrate; and at least one semiconductor element electrically connected to the resistance and the capacitor.
Public/Granted literature
- US20210249389A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2021-08-12
Information query
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