Invention Grant
- Patent Title: Capacitive memory structure, functional layer, electronic device, and methods thereof
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Application No.: US17213797Application Date: 2021-03-26
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Publication No.: US11610903B2Publication Date: 2023-03-21
- Inventor: Tony Schenk
- Applicant: Ferroelectric Memory GmbH
- Applicant Address: DE Dresden
- Assignee: Ferroelectric Memory GmbH
- Current Assignee: Ferroelectric Memory GmbH
- Current Assignee Address: DE Dresden
- Agency: Hickman Becker Bingham Ledesma LLP
- Agent Malgorzata A. Kulczycka
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/11507 ; H01L49/02 ; H01L21/02

Abstract:
Various aspects relate to a functional layer and the formation thereof. A method for manufacturing a functional layer of an electronic device may include: forming a plurality of sublayers of the functional layer by a plurality of consecutive sublayer processes, each sublayer process of the plurality of consecutive sublayer processes comprising: forming a sublayer of the plurality of sublayers by vapor deposition, the sublayer comprising one or more materials, and, subsequently, crystallizing the one or more materials comprised in the sublayer.
Public/Granted literature
- US20220173114A1 CAPACITIVE MEMORY STRUCTURE, FUNCTIONAL LAYER, ELECTRONIC DEVICE, AND METHODS THEREOF Public/Granted day:2022-06-02
Information query
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