Invention Grant
- Patent Title: Crossbar array circuit with parallel grounding lines
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Application No.: US17357341Application Date: 2021-06-24
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Publication No.: US11610942B2Publication Date: 2023-03-21
- Inventor: Ning Ge
- Applicant: TetraMem Inc.
- Applicant Address: US CA Newark
- Assignee: TetraMem Inc.
- Current Assignee: TetraMem Inc.
- Current Assignee Address: US CA Newark
- Agency: Jaffery Watson Mendonsa & Hamilton LLP
- Main IPC: G11C13/00
- IPC: G11C13/00 ; H01L27/24 ; H01L45/00

Abstract:
Technologies relating to crossbar array circuits with parallel grounding lines are disclosed. An example crossbar array circuit includes: a word line; a bit line; a first selector line, a grounding line; a first transistor including a first source terminal, a first drain terminal, a first gate terminal, and a first body terminal; and an RRAM device connected in series with the first transistor. The grounding line is connected to the first body terminal and is grounded and the grounding line parallel to the bit line. The first selector line is connected to the first gate terminal. In some implementations, the RRAM device is connected between the first transistor via the first drain terminal and the word line, and the first source terminal is connected to the bit line.
Public/Granted literature
- US20210320148A1 CROSSBAR ARRAY CIRCUIT WITH PARALLEL GROUNDING LINES Public/Granted day:2021-10-14
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