Invention Grant
- Patent Title: Vertical compound semiconductor structure and method for producing the same
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Application No.: US16936133Application Date: 2020-07-22
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Publication No.: US11610967B2Publication Date: 2023-03-21
- Inventor: Peter Ramm , Armin Klumpp
- Applicant: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
- Applicant Address: DE Munich
- Assignee: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
- Current Assignee: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
- Current Assignee Address: DE Munich
- Agency: Perkins Coie LLP
- Agent Michael A. Glenn
- Priority: DE102019211468.7 20190731
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/02 ; H01L29/24 ; H01L29/732
Abstract:
The invention relates to a vertical compound semiconductor structure having a substrate with a first main surface and an opposite second main surface, a vertical channel opening extending completely through the substrate between the first main surface and the second main surface and a layer stack arranged within the vertical channel opening. The layer stack includes an electrically conductive layer arranged within the vertical channel opening and a compound semiconductor layer arranged within the vertical channel opening. The compound semiconductor layer includes a compound semiconductor layer arranged on the electrically conductive layer and connected galvanically to the electrically conductive layer. Further, the invention relates to a method for producing such a vertical compound semiconductor structure.
Public/Granted literature
- US20210036105A1 VERTICAL COMPOUND SEMICONDUCTOR STRUCTURE AND METHOD FOR PRODUCING THE SAME Public/Granted day:2021-02-04
Information query
IPC分类:
