Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17328822Application Date: 2021-05-24
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Publication No.: US11610992B2Publication Date: 2023-03-21
- Inventor: Shuhei Mitani , Yuki Nakano , Heiji Watanabe , Takayoshi Shimura , Takuji Hosoi , Takashi Kirino
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agent Gregory M. Howison
- Priority: JPJP2009-206372 20090907,JPJP2009-206373 20090907,JPJP2009-206374 20090907
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/10 ; H01L29/78 ; H01L21/04 ; H01L21/82 ; H01L29/417 ; H01L29/423 ; H01L29/51 ; H01L29/66 ; H01L29/16 ; H01L29/08 ; H01L29/45
Abstract:
A semiconductor device includes a semiconductor layer of a first conductivity type. A well region that is a second conductivity type well region is formed on a surface layer portion of the semiconductor layer and has a channel region defined therein. A source region that is a first conductivity type source region is formed on a surface layer portion of the well region. A gate insulating film is formed on the semiconductor layer and has a multilayer structure. A gate electrode is opposed to the channel region of the well region where a channel is formed through the gate insulating film.
Public/Granted literature
- US20210280715A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-09-09
Information query
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