Invention Grant
- Patent Title: Semiconductor material and semiconductor device having a metal element and nitrogen
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Application No.: US16759020Application Date: 2018-11-15
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Publication No.: US11610997B2Publication Date: 2023-03-21
- Inventor: Shunpei Yamazaki , Shota Sambonsuge , Yasumasa Yamane , Yuta Endo , Naoki Okuno
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JPJP2017-225439 20171124,JPJP2017-231456 20171201,JPJP2017-231457 20171201,JPJP2017-231531 20171201,JPJP2017-231532 20171201
- International Application: PCT/IB2018/058981 WO 20181115
- International Announcement: WO2019/102314 WO 20190531
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/108 ; H01L29/22
Abstract:
A semiconductor material is an oxide including a metal element and nitrogen, in which the metal element is indium (In), an element M (M is aluminum (Al), gallium (Ga), yttrium (Y), or tin (Sn)), and zinc (Zn) and nitrogen is taken into an oxygen vacancy or bonded to an atom of the metal element.
Public/Granted literature
- US20210119052A1 SEMICONDUCTOR MATERIAL AND SEMICONDUCTOR DEVICE Public/Granted day:2021-04-22
Information query
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