Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17465520Application Date: 2021-09-02
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Publication No.: US11611009B2Publication Date: 2023-03-21
- Inventor: Masahiko Hori , Tatsuo Tonedachi , Yoshinari Tamura , Mami Fujihara
- Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Applicant Address: JP Tokyo; JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Current Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JPJP2021-047800 20210322
- Main IPC: H01L31/167
- IPC: H01L31/167 ; H03K17/785 ; H01L31/0203 ; H01L31/02
Abstract:
According to one or more embodiments, a semiconductor device includes a mounting substrate and a semiconductor element on the mounting substrate. The mounting substrate has a first electrode pad and a second electrode pad. The semiconductor element has a supporting substrate, third and fourth electrode pads, first slits and second slits. The third and fourth electrode pads are provided on a first surface of the supporting substrate facing the mounting substrate. The first slits are provided both in the supporting substrate and in the third electrode pad. The second slits are provided both in the supporting substrate and in the fourth electrode pad. The semiconductor device further includes a first conductive bonding agent that connects the first electrode pad to the third electrode pad and a second conductive bonding agent that connects the second electrode pad to the fourth electrode pad.
Public/Granted literature
- US20220302337A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-09-22
Information query
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