Invention Grant
- Patent Title: Quantum dot device and electronic device
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Application No.: US17199977Application Date: 2021-03-12
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Publication No.: US11611054B2Publication Date: 2023-03-21
- Inventor: Heejae Lee , Moon Gyu Han , Won Sik Yoon , Eun Joo Jang , Dae Young Chung , Tae Hyung Kim , Hyo Sook Jang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Cantor Colburn LLP
- Priority: KR10-2020-0032720 20200317,KR10-2021-0032660 20210312
- Main IPC: H01L51/50
- IPC: H01L51/50

Abstract:
A quantum dot device including a first electrode and a second electrode each having a surface opposite the other, a quantum dot layer disposed between the first electrode and the second electrode, and an electron auxiliary layer disposed between the quantum dot layer and the second electrode, wherein the electron auxiliary layer includes inorganic nanoparticles including an alkaline-earth metal, and an alkali metal, an alkali metal compound, or a combination thereof, and an electronic device including the quantum dot device.
Public/Granted literature
- US20210296608A1 QUANTUM DOT DEVICE AND ELETRONIC DEVICE Public/Granted day:2021-09-23
Information query
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