- Patent Title: Long-wave infrared detecting element, long-wave infrared detecting element array structure, long-wave infrared temperature detecting device, and thermal imaging device
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Application No.: US17386144Application Date: 2021-07-27
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Publication No.: US11614364B2Publication Date: 2023-03-28
- Inventor: Dongkyun Kim , Hyuck Choo
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2020-0168726 20201204
- Main IPC: G01J5/02
- IPC: G01J5/02 ; G01J5/08 ; G01J5/06 ; G01J5/00

Abstract:
A long-wave infrared detecting element includes a magnetic field generator configured to generate a magnetic field; a substrate on the magnetic field generator; a superparamagnetic material layer disposed to be separated from the substrate and magnetized by the magnetic field generated by the magnetic field generator; a support unit on the substrate to support the superparamagnetic material layer such that the superparamagnetic material layer separated from the substrate, such that the support unit and the superparamagnetic material layer generate heat by absorbing infrared radiation from the outside; and a magneto-electric conversion unit that generates an electrical signal proportional to both a strength of the magnetic field generated by the magnetic field generator and the magnetization of the superparamagnetic material layer.
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