- Patent Title: Multi-level signal receivers and memory systems including the same
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Application No.: US17223458Application Date: 2021-04-06
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Publication No.: US11615833B2Publication Date: 2023-03-28
- Inventor: Kwangseob Shin , Jindo Byun , Younghoon Son , Youngdon Choi , Junghwan Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2020-0110031 20200831
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C11/4091 ; G11C11/4074 ; G11C11/4076 ; G11C11/408 ; G11C11/4099

Abstract:
A multi-level signal receiver includes a data sampler circuit and a reference voltage generator circuit. The data sampler includes (M−1) sense amplifiers which compare a multi-level signal having one of M voltage levels different from each other with (M−1) reference voltages. The data sampler generates a target data signal including N bits, M is an integer greater than two and N is an integer greater than one. The reference voltage generator generates the (M−1) reference voltages, At least two sense amplifiers of the (M−1) sense amplifiers have different sensing characteristics.
Public/Granted literature
- US20220068356A1 MULTI-LEVEL SIGNAL RECEIVERS AND MEMORY SYSTEMS INCLUDING THE SAME Public/Granted day:2022-03-03
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