Invention Grant
- Patent Title: Memory device and programming method thereof
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Application No.: US17459371Application Date: 2021-08-27
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Publication No.: US11615849B2Publication Date: 2023-03-28
- Inventor: Haibo Li , Chao Zhang
- Applicant: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Applicant Address: CN Wuhan
- Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Wuhan
- Agency: Bayes PLLC
- Main IPC: G11C16/24
- IPC: G11C16/24 ; G11C16/10 ; G11C16/08 ; G11C16/34
Abstract:
A method for programming a memory device including a first plane and a second plane is provided. The method includes simultaneously initiating programming of the first plane and the second plane, and in response to the first plane being successfully programmed and the second plane not being successfully programmed, suspending the programming of the first plane, and keeping the programming of the second plane.
Public/Granted literature
- US20210391014A1 MEMORY DEVICE AND PROGRAMMING METHOD THEREOF Public/Granted day:2021-12-16
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