Invention Grant
- Patent Title: Semiconductor device and memory system
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Application No.: US17699982Application Date: 2022-03-21
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Publication No.: US11615852B2Publication Date: 2023-03-28
- Inventor: Takayuki Tsukamoto
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JPJP2020-042001 20200311
- Main IPC: G11C16/30
- IPC: G11C16/30 ; G06F3/06

Abstract:
A semiconductor device includes a first transistor; a first resistor; a second resistor; a first circuit configured to apply a first voltage to the first transistor. The first voltage is based on a difference between a reference voltage and an output voltage divided by the first and second resistors. A first current through the first circuit in a first mode is less than a second current through the first circuit in a second mode. The semiconductor device includes a capacitor connected to the output terminal; and a second circuit connected to the capacitor that: (a) disconnects the first circuit from the capacitor and apply a second voltage to the capacitor in a first mode, and (b) electrically connects the first circuit to the capacitor in the second mode.
Public/Granted literature
- US20220208281A1 SEMICONDUCTOR DEVICE AND MEMORY SYSTEM Public/Granted day:2022-06-30
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