Invention Grant
- Patent Title: Microscopic system for testing structures and defects on EUV lithography photomasks
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Application No.: US17760684Application Date: 2020-09-15
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Publication No.: US11615897B2Publication Date: 2023-03-28
- Inventor: Rainer Lebert , Christoph Sebastian Phiesel , Thomas Missalla , Andreas Biermanns-Foeth , Christian Piel
- Applicant: RI Research Instruments GmbH
- Applicant Address: DE Bergisch Gladbach
- Assignee: RI Research Instruments GmbH
- Current Assignee: RI Research Instruments GmbH
- Current Assignee Address: DE Bergisch Gladbach
- Agency: Christensen, Fonder, Dardi & Herbert PLLC
- Priority: DE102019124919.8 20190917
- International Application: PCT/DE2020/100801 WO 20200915
- International Announcement: WO2021/052533 WO 20210325
- Main IPC: G21K1/06
- IPC: G21K1/06 ; G03F1/84 ; G03F7/20 ; G21K1/10 ; G21K7/00
Abstract:
A microscope system for flexibly, efficiently and quickly inspecting patterns and defects on extreme ultraviolet (EUV) lithography photomasks. The system includes a stand-alone plasma-based EUV radiation source with an emission spectrum with a freestanding line emission in the spectral range from 12.5 nm to 14.5 nm has a relative bandwidth of λ/Δλ>1000, means for the broadband spectral filtering λ/Δλ
Public/Granted literature
- US20220392660A1 MICROSCOPIC SYSTEM FOR TESTING STRUCTURES AND DEFECTS ON EUV LITHOGRAPHY PHOTOMASKS Public/Granted day:2022-12-08
Information query
