Invention Grant
- Patent Title: Method for forming boron-based film, formation apparatus
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Application No.: US17041767Application Date: 2019-02-26
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Publication No.: US11615957B2Publication Date: 2023-03-28
- Inventor: Hirokazu Ueda , Jinwang Li , Masahiro Oka , Yoshimasa Watanabe , Yuuki Yamamoto , Hiroyuki Ikuta
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer; Tanya E. Harkins
- Priority: JPJP2018-072625 20180404,JPJP2018-078543 20180416
- International Application: PCT/JP2019/007273 WO 20190226
- International Announcement: WO2019/193872 WO 20191010
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/02 ; C23C16/02 ; C23C16/28 ; C23C16/455 ; C23C16/50
Abstract:
A method of forming a boron-based film mainly containing boron on a substrate includes forming, on the substrate, an adhesion layer containing an element contained in a surface of the substrate and nitrogen, and subsequently, forming the boron-based film on the adhesion layer.
Public/Granted literature
- US20210090888A1 METHOD FOR FORMING BORON-BASED FILM, FORMATION APPARATUS Public/Granted day:2021-03-25
Information query
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