Invention Grant
- Patent Title: Methods to reduce microbridge defects in EUV patterning for microelectronic workpieces
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Application No.: US16827928Application Date: 2020-03-24
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Publication No.: US11615958B2Publication Date: 2023-03-28
- Inventor: Akiteru Ko
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Main IPC: H01L21/033
- IPC: H01L21/033 ; G02B1/11 ; G03F7/20 ; G02B1/14

Abstract:
Embodiments reduce or eliminate microbridge defects in extreme ultraviolet (EUV) patterning for microelectronic workpieces. A patterned layer is formed over a multilayer structure using an EUV patterning process. Protective material is then deposited over the patterned layer using one or more oblique deposition processes. One or more material bridges extending between line patterns within the patterned layer are then removed while using the protective material to protect the line patterns. As such, microbridge defects caused in prior solutions are reduced or eliminated. For one embodiment, the oblique deposition processes include physical vapor deposition (PVD) processes that apply the same or different protective materials in multiple directions with respect to line patterns within the patterned layer. For one embodiment, the removing includes one or more plasma trim processes. Variations can be implemented.
Public/Granted literature
- US20210305048A1 METHODS TO REDUCE MICROBRIDGE DEFECTS IN EUV PATTERNING FOR MICROELECTRONIC WORKPIECES Public/Granted day:2021-09-30
Information query
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