The present invention provides a method for removing re-sputtered material on a substrate. A process chamber having a plasma source and a substrate support is provided along with the substrate having an upper surface and a lower surface. A masking material having a patterned sidewall is patterned onto the upper surface of the substrate along with a sacrificial layer between the upper surface of the substrate and the masking material. The lower surface of the substrate is placed onto the substrate support. A plasma is generated using the plasma source. The substrate is processed on the substrate support using the generated plasma. The sacrificial layer is removed after the processing of the substrate.