Invention Grant
- Patent Title: Semiconductor device with low-galvanic corrosion structures, and method of making same
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Application No.: US17140414Application Date: 2021-01-04
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Publication No.: US11615985B2Publication Date: 2023-03-28
- Inventor: Shahaji B. More , Chandrashekhar Prakash Savant
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/535 ; H01L23/532 ; H01L21/02
Abstract:
A semiconductor device includes a first dielectric layer over a device base layer, the first dielectric layer having a first opening with a first sidewall; a first interconnect segment extending through the first opening; and a cap layer over a top surface of the first interconnect segment, wherein the cap layer comprises a first metal, carbon, and nitrogen.
Public/Granted literature
- US20220216102A1 SEMICONDUCTOR DEVICE WITH LOW-GALVANIC CORROSION STRUCTURES, AND METHOD OF MAKING SAME Public/Granted day:2022-07-07
Information query
IPC分类:
