Invention Grant
- Patent Title: Semiconductor device having deep trench structure and method of manufacturing thereof
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Application No.: US17741791Application Date: 2022-05-11
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Publication No.: US11615989B2Publication Date: 2023-03-28
- Inventor: Yang Beom Kang , Kang Sup Shin
- Applicant: KEY FOUNDRY CO., LTD.
- Applicant Address: KR Cheongju-si
- Assignee: KEY FOUNDRY CO., LTD.
- Current Assignee: KEY FOUNDRY CO., LTD.
- Current Assignee Address: KR Cheongju-si
- Agency: NSIP Law
- Priority: KR10-2019-0049272 20190426
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L21/76 ; H01L21/8234 ; H01L29/78 ; H01L29/06 ; H01L29/10 ; H01L21/285 ; H01L21/265 ; H01L21/3105 ; H01L21/02 ; H01L21/764 ; H01L21/762 ; H01L21/8236 ; H01L29/66 ; H01L29/45 ; H01L27/088
Abstract:
A semiconductor device includes etch stop films formed on the first gate electrode, the first source region, the first drain region, and the shallow trench isolation regions, respectively. First interlayer insulating films are formed on the etch stop film, respectively. Deep trenches are formed in the substrate between adjacent ones of the first interlayer insulating films to overlap the shallow trench isolation regions. Sidewall insulating films are formed in the deep trenches, respectively. A gap-fill insulating film is formed on the sidewall insulating film. A second interlayer insulating film is formed on the gap-fill insulating film. A top surface of the second interlayer insulating film is substantially planar and a bottom surface of the second interlayer insulating film is undulating.
Public/Granted literature
- US20220270932A1 SEMICONDUCTOR DEVICE HAVING DEEP TRENCH STRUCTURE AND METHOD OF MANUFACTURING THEREOF Public/Granted day:2022-08-25
Information query
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