Invention Grant
- Patent Title: Patterned shielding structure
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Application No.: US16830555Application Date: 2020-03-26
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Publication No.: US11616012B2Publication Date: 2023-03-28
- Inventor: Hsiao-Tsung Yen , Kuan-Yu Shih , Chih-Yu Tsai , Ka-Un Chan
- Applicant: Realtek Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: Realtek Semiconductor Corporation
- Current Assignee: Realtek Semiconductor Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Locke Lord LLP
- Agent Tim Tingkang Xia, Esq.
- Priority: TW108134470 20190924
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L49/02

Abstract:
A patterned shielding structure is disposed between an inductor structure and a substrate. The patterned shielding structure includes a shielding layer and a first stacked structure. The shielding layer extends along a plane. The first stacked structure is stacked, along a first direction, on the shielding layer. The first direction is perpendicular to the plane. The first stacked structure has a crossed shape and is configured to enhance a shielding effect.
Public/Granted literature
- US20210090988A1 PATTERNED SHIELDING STRUCTURE Public/Granted day:2021-03-25
Information query
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