Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US17656143Application Date: 2022-03-23
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Publication No.: US11616072B2Publication Date: 2023-03-28
- Inventor: Tetsuya Yamashita , Takuyo Nakayama , Takashi Ichikawa , Tadayoshi Uechi , Takashi Izumida
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2019-171389 20190920
- Main IPC: H01L27/11565
- IPC: H01L27/11565 ; H01L27/11575 ; H01L27/11582 ; H01L27/11578

Abstract:
According to one embodiment, a semiconductor memory device includes a first stacked body in which a plurality of first conductive layers are stacked at intervals in a first direction above a semiconductor substrate; a second stacked body in which a plurality of second conductive layers are stacked at intervals in the first direction above the semiconductor substrate; and a first slit extending in a second direction perpendicular to the first direction, the first slit isolating the first stacked body and the second stacked body in a third direction perpendicular to the first and second directions.
Public/Granted literature
- US20220216228A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2022-07-07
Information query
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