Invention Grant
- Patent Title: Three-dimensional memory device with ferroelectric material
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Application No.: US17033006Application Date: 2020-09-25
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Publication No.: US11616080B2Publication Date: 2023-03-28
- Inventor: Chao-I Wu , Yu-Ming Lin , Han-Jong Chia
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/1159
- IPC: H01L27/1159 ; H01L27/11597 ; H01L29/66 ; H01L29/78 ; H01L21/02 ; H01L29/24
Abstract:
A memory device includes: a first layer stack and a second layer stack formed successively over a substrate, where each of the first and the second layer stacks includes a first metal layer, a second metal layer, and a first dielectric material between the first and the second metal layers; a second dielectric material between the first and the second layer stacks; a gate electrode extending through the first and the second layer stacks, and through the second dielectric material; a ferroelectric material extending along and contacting a sidewall of the gate electrode; and a channel material, where a first portion and a second portion of the channel material extend along and contact a first sidewall of the first layer stack and a second sidewall of the second layer stack, respectively, where the first portion and the second portion of the channel material are separated from each other.
Public/Granted literature
- US20210375928A1 THREE-DIMENSIONAL MEMORY DEVICE WITH FERROELECTRIC MATERIAL Public/Granted day:2021-12-02
Information query
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