Invention Grant
- Patent Title: Transistors having increased effective channel width
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Application No.: US16830086Application Date: 2020-03-25
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Publication No.: US11616088B2Publication Date: 2023-03-28
- Inventor: Sing-Chung Hu , Seong Yeol Mun , Bill Phan
- Applicant: OMNIVISION TECHNOLOGIES, INC.
- Applicant Address: US CA Santa Clara
- Assignee: OMNIVISION TECHNOLOGIES, INC.
- Current Assignee: OMNIVISION TECHNOLOGIES, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: COJK/OmniVision Technologies, Inc.
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L29/66 ; H01L21/762 ; H01L29/423 ; H01L29/78
Abstract:
Image sensors include a photodiode disposed in a semiconductor substrate and a transistor operatively coupled to the photodiode. The transistor includes a nonplanar structure disposed in the semiconductor substrate, which is bounded by two outer trench structures formed in the semiconductor substrate. Isolation deposits are disposed within the two outer trench structures formed in the semiconductor substrate. A gate includes a planar gate and two fingers extending into one of two inner trench structures formed in the semiconductor substrate between the nonplanar structure and a respective one of the two outer trench structures. This structure creates an electron channel extending along a plurality of sidewall portions of the nonplanar structure in a channel width plane.
Public/Granted literature
- US20210305299A1 TRANSISTORS HAVING INCREASED EFFECTIVE CHANNEL WIDTH Public/Granted day:2021-09-30
Information query
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