Invention Grant
- Patent Title: Semiconductor substrate, method of manufacturing semiconductor device, and method of manufacturing semiconductor substrate
-
Application No.: US17196186Application Date: 2021-03-09
-
Publication No.: US11616120B2Publication Date: 2023-03-28
- Inventor: Fuyuma Ito , Tatsuhiko Koide , Hiroki Nakajima , Naomi Yanai , Tomohiko Sugita , Hakuba Kitagawa , Takaumi Morita
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2020-154443 20200915
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/02 ; H01L27/06 ; H01L21/768
Abstract:
A semiconductor substrate includes a surface having a groove. The groove includes an inner bottom surface and an inner wall surface. The inner wall surface has a depression. The depression has a depth from a direction along a surface of the inner wall surface to a width direction of the groove. The substrate being exposed to the inner wall surface.
Public/Granted literature
Information query
IPC分类:
