Invention Grant
- Patent Title: Method of making fin field effect transistor (FinFET) device
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Application No.: US17207066Application Date: 2021-03-19
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Publication No.: US11616124B2Publication Date: 2023-03-28
- Inventor: Jhong-Sheng Wang , Jiaw-Ren Shih , Chun-Wei Chang , Sheng-Feng Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/06 ; H01L29/78 ; H01L21/265 ; H01L21/306 ; H01L21/3065 ; H01L21/308 ; H01L21/762 ; H01L29/66 ; H01L21/266
Abstract:
A method of making a semiconductor device includes defining a first fin structure over a major surface of a substrate, wherein the first fin includes a first material. The method includes defining a second fin structure over the major surface of the substrate. Defining the second fin structure includes forming a lower portion of the second fin structure, closest to the substrate, having the first material, and forming an upper portion of the second fin structure, farthest from the substrate, having a second material different from the first material. The method includes forming a dielectric material over the substrate and between the first and second fin structures. The method includes removing the upper portion of the second fin structure, wherein removing the upper portion of the second fin structure includes reducing a height of the second fin structure to be less than a height of the first fin structure.
Public/Granted literature
- US20210226012A1 METHOD OF MAKING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE Public/Granted day:2021-07-22
Information query
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