Invention Grant
- Patent Title: Semiconductor device and methods of manufacture
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Application No.: US17340802Application Date: 2021-06-07
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Publication No.: US11616132B2Publication Date: 2023-03-28
- Inventor: Yu-Sheng Wang , Chi-Cheng Hung , Chia-Ching Lee , Ching-Hwanq Su
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/66 ; H01L29/49 ; H01L29/78 ; H01L21/28 ; H01L21/762 ; H01L29/06 ; H01L29/08 ; H01L29/51
Abstract:
A semiconductor device and method of manufacturing are provided. In an embodiment a first nucleation layer is formed within an opening for a gate-last process. The first nucleation layer is treated in order to remove undesired oxygen by exposing the first nucleation layer to a precursor that reacts with the oxygen to form a gas. A second nucleation layer is then formed, and a remainder of the opening is filled with a bulk conductive material.
Public/Granted literature
- US20210296450A1 SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURE Public/Granted day:2021-09-23
Information query
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