Invention Grant
- Patent Title: Schottky power mosfet
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Application No.: US16821165Application Date: 2020-03-17
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Publication No.: US11616137B2Publication Date: 2023-03-28
- Inventor: Haian Lin , Shuming Xu , Jacek Korec
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Yudong Kim; Frank D. Cimino
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/78 ; H01L29/66 ; H01L29/47 ; H01L29/872 ; H01L29/417 ; H01L29/10
Abstract:
A semiconductor device containing a vertical power MOSFET with a planar gate and an integrated Schottky diode is formed by forming a source electrode on an extended drain of the vertical power MOSFET to form the Schottky diode and forming the source electrode on a source region of the vertical power MOSFET. The Schottky diode is connected through the source electrode to the source region. A drain electrode is formed at a bottom of a substrate of the semiconductor device. The Schottky diode is connected through the extended drain of the vertical power MOSFET to the drain electrode.
Public/Granted literature
- US20200220007A1 SCHOTTKY POWER MOSFET Public/Granted day:2020-07-09
Information query
IPC分类:
