Invention Grant
- Patent Title: Semiconductor devices with backside power rail and methods of fabrication thereof
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Application No.: US17005134Application Date: 2020-08-27
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Publication No.: US11616143B2Publication Date: 2023-03-28
- Inventor: Chun-Yuan Chen , Huan-Chieh Su , Pei-Yu Wang , Chih-Hao Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: NZ Carr Law Office
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8234 ; H01L27/088 ; H01L29/06 ; H01L29/417 ; H01L29/66

Abstract:
Embodiments of the present disclosure provide a method for forming backside metal contacts with reduced Cgd and increased speed. Particularly, source/drain features on the drain side, or source/drain features without backside metal contact, are recessed from the backside to the level of the inner spacer to reduce Cgd. Some embodiments of the present disclosure use a sacrificial liner to protect backside alignment feature during backside processing, thus, preventing shape erosion of metal conducts and improving device performance.
Public/Granted literature
- US20220069116A1 SEMICONDUCTOR DEVICES WITH BACKSIDE POWER RAIL AND METHODS OF FABRICATION THEREOF Public/Granted day:2022-03-03
Information query
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