Invention Grant
- Patent Title: FINFET stack gate memory and method of forming thereof
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Application No.: US17563214Application Date: 2021-12-28
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Publication No.: US11616145B2Publication Date: 2023-03-28
- Inventor: Hsingya Arthur Wang
- Applicant: Integrated Silicon Solution Inc.
- Applicant Address: US CA Milpitas
- Assignee: Integrated Silicon Solution Inc.
- Current Assignee: Integrated Silicon Solution Inc.
- Current Assignee Address: US CA Milpitas
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/788 ; H01L29/792 ; H01L21/762 ; H01L29/66
Abstract:
A method of forming a FinFET stack gate memory includes a nitride film forming step, a nitride film is formed on a memory cell area with a shallow trench isolation (STI) structure; a stripping step, a portion of the nitride film is stripped, the other portion of the nitride film is remained at the STI structure, and a STI oxide is disposed in the STI structure; a floating gate (FG) structure forming step, a tunnel oxide is disposed, and a first polysilicon is disposed to form a FG structure; an oxide-nitride-oxide (ONO) layer disposing step, a portion of the STI oxide is stripped, and an ONO layer is disposed; a removing step, a portion of the ONO layer is removed; a control gate (CG) structure forming step, a portion of the FG structure is removed, and a second polysilicon is disposed to form a CG structure.
Public/Granted literature
- US20220123146A1 FINFET STACK GATE MEMORY AND MEHOD OF FORMING THEREOF Public/Granted day:2022-04-21
Information query
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