Invention Grant
- Patent Title: Semiconductor device with C-shaped channel portion and electronic apparatus including the same
-
Application No.: US17153839Application Date: 2021-01-20
-
Publication No.: US11616150B2Publication Date: 2023-03-28
- Inventor: Huilong Zhu
- Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Applicant Address: CN Beijing
- Assignee: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Current Assignee: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Current Assignee Address: CN Beijing
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: CN202010072949.8 20200121
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/06 ; H01L29/775 ; H01L27/092 ; H01L29/417 ; H01L29/423 ; H01L29/40 ; H01L29/66 ; H01L21/8238
Abstract:
A semiconductor device with C-shaped channel portion and an electronic apparatus including the semiconductor device are disclosed. According to the embodiments, the semiconductor device may include a first semiconductor element and a second semiconductor element adjacent in a first direction. The first semiconductor element and the second semiconductor element may respectively include: a channel portion on a substrate, the channel portion including a curved nano-sheet or nano-wire with a C-shaped section; source/drain portions at upper and lower ends of the channel portion with respect to the substrate, respectively; and a gate stack surrounding a periphery of the channel portion. The channel portion of the first semiconductor element and the channel portion of the second semiconductor element may be substantially coplanar.
Public/Granted literature
- US20210226069A1 SEMICONDUCTOR DEVICE WITH C-SHAPED CHANNEL PORTION AND ELECTRONIC APPARATUS INCLUDING THE SAME Public/Granted day:2021-07-22
Information query
IPC分类:
