Invention Grant
- Patent Title: Light emitting device
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Application No.: US16940879Application Date: 2020-07-28
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Publication No.: US11616170B2Publication Date: 2023-03-28
- Inventor: Taehun Kim , Dongmyung Shin , Minho Kim , Minwook Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2020-0005149 20200115
- Main IPC: H01L33/38
- IPC: H01L33/38 ; H01L33/44 ; H01L33/62 ; H01L33/42

Abstract:
A light emitting device may include a light emitting structure, a transparent electrode, a first insulation layer, a first electrode, a second insulation layer and a second electrode. The light emitting structure may include a first semiconductor layer, an activation layer and a second semiconductor layer sequentially stacked. The transparent electrode may be formed on an upper surface of the second semiconductor layer. The transparent electrode may have at least one opening. The first insulation layer may be formed on an upper surface of the transparent electrode to fill the at least one opening. The first electrode may be formed on an upper surface of the first insulation layer. The first electrode may include a contact extending through the first insulation layer and connected with the transparent electrode. The second insulation layer may be formed on an upper surface of the first electrode. The second electrode may be formed on an upper surface of the second insulation layer. The second electrode may be electrically connected with the first semiconductor layer.
Public/Granted literature
- US20210217929A1 LIGHT EMITTING DEVICE Public/Granted day:2021-07-15
Information query
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