Invention Grant
- Patent Title: Method of producing semiconductor sintered body, electrical/electronic member, and semiconductor sintered body
-
Application No.: US16612850Application Date: 2018-05-17
-
Publication No.: US11616182B2Publication Date: 2023-03-28
- Inventor: Naoki Sadayori
- Applicant: NITTO DENKO CORPORATION
- Applicant Address: JP Ibaraki
- Assignee: NITTO DENKO CORPORATION
- Current Assignee: NITTO DENKO CORPORATION
- Current Assignee Address: JP Ibaraki
- Agency: Hauptman Ham, LLP
- Priority: JPJP2017-100107 20170519,JPJP2017-100108 20170519,JPJP2017-199057 20171013
- International Application: PCT/JP2018/019160 WO 20180517
- International Announcement: WO2018/212296 WO 20181122
- Main IPC: H01L35/18
- IPC: H01L35/18 ; H01L35/22 ; H01L35/26 ; H01L35/24 ; H01L35/28 ; C01B33/06 ; H01L35/34 ; B28B11/24 ; B22F3/10 ; B22F3/105 ; B82Y30/00

Abstract:
A semiconductor sintered body comprising a polycrystalline body, wherein the polycrystalline body includes silicon or a silicon alloy, wherein the average grain size of the crystal grains forming the polycrystalline body is 1 μm or less, and wherein nanoparticles including one or more of a carbide of silicon, a nitride of silicon, and an oxide of silicon are present at a grain boundary of the grains.
Information query
IPC分类: