Invention Grant
- Patent Title: Formation of a two-layer via structure to mitigate damage to a display device
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Application No.: US17361693Application Date: 2021-06-29
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Publication No.: US11616209B2Publication Date: 2023-03-28
- Inventor: Yung-Chang Chang , Ming Chyi Liu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L51/52
- IPC: H01L51/52 ; H01L27/32 ; H01L51/56

Abstract:
In some embodiments, the present disclosure relates to a method that includes forming an isolation structure over a reflector electrode and forming a protective layer over the isolation structure. Further, a first removal process is performed to form a first opening in the protective layer and the isolation structure to expose a first surface of the reflector electrode. A cleaning process is performed to clean the first surface of the reflector electrode. A conductive layer is formed over the protective layer and within the first opening. The conductive layer includes a different material than the protective layer. A second removal process is performed to remove peripheral portions of the protective layer and the conductive layer to form a via structure within the opening, extending through the isolation structure to contact the reflector electrode, and including the protective layer and the conductive layer.
Public/Granted literature
- US20210328174A1 FORMATION OF A TWO-LAYER VIA STRUCTURE TO MITIGATE DAMAGE TO A DISPLAY DEVICE Public/Granted day:2021-10-21
Information query
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