An active IR camouflage device may include a base layer, a first dielectric layer over the base layer, a phase transition material layer over the first dielectric layer, a second dielectric layer over the phase transition material layer, and a first metal layer over the second dielectric layer and defining a pattern of openings therein. The active IR camouflage device may have circuitry configured to selectively cause a transition from a first phase state to a second phase state of the phase transition material layer to control IR reflectance/emission of a top plasmonic layer, making it appear/disappear from the IR detector/camera. In some embodiments, the active IR camouflage device may also include a second metal layer between the base layer and the first dielectric layer.