Disclosed is a system of inspecting a pattern defect in a scanning-type reflective extreme ultraviolet (EUV) mask. The system may include a photoelectron generator, a source light generator configured to generate a coherent EUV light from electrons generated by the photoelectron generator, a mask positioning structure configured to move the reflective EUV mask, an optic module placed on the mask positioning structure and configured to reflect and focus the EUV light, a zoneplate lens array configured to focus the EUV light on the reflective EUV mask, and a detection array placed near the zoneplate lens array to measure an energy of light reflected from the mask. The entire pattern region of the reflective EUV mask may be inspected by moving the reflective EUV mask using the mask positioning structure to more efficiently inspect a pattern defect in the EUV mask.