Invention Grant
- Patent Title: Transistor—level defect coverage and defect simulation
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Application No.: US17450899Application Date: 2021-10-14
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Publication No.: US11620424B2Publication Date: 2023-04-04
- Inventor: Mayukh Bhattacharya , Sayandeep Sanyal , Amit Patra , Pallab Dasgupta
- Applicant: Synopsys, Inc.
- Applicant Address: US CA Mountain View
- Assignee: Synopsys, Inc.
- Current Assignee: Synopsys, Inc.
- Current Assignee Address: US CA Mountain View
- Agency: Patterson + Sheridan, LLP
- Main IPC: G06F30/3308
- IPC: G06F30/3308 ; G06F30/333 ; G06F30/337 ; G06F30/373 ; G06F30/398

Abstract:
A system and method utilized to receive an integrated circuit (IC) design and generating a graph based on a plurality of sub-circuits of the IC design. Further, one or more candidate sub-circuits are determined from the plurality of sub-circuits based on the graph. Additionally, one or more sub-circuits are identified from the one or more candidate sub-circuits based on a number of transistors and a number of edges within each of the plurality of sub-circuits. An indication of the identified one or more sub-circuits is provided.
Public/Granted literature
- US20220121799A1 TRANSISTOR- LEVEL DEFECT COVERAGE AND DEFECT SIMULATION Public/Granted day:2022-04-21
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