Invention Grant
- Patent Title: Neuromorphic device based on memory
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Application No.: US16892637Application Date: 2020-06-04
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Publication No.: US11620504B2Publication Date: 2023-04-04
- Inventor: Hak-Soo Yu , Nam Sung Kim , Kyomin Sohn , Jaeyoun Youn
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2019-0146341 20191115
- Main IPC: G06N3/063
- IPC: G06N3/063 ; G06N3/08 ; G11C11/408 ; G11C11/4091 ; G11C11/4096 ; G11C11/54 ; G11C11/56

Abstract:
A neuromorphic device includes a memory cell array that includes first memory cells corresponding to a first address and storing first weights and second memory cells corresponding to a second address and storing second weights, and a neuron circuit that includes an integrator summing first read signals from the first memory cells and an activation circuit outputting a first activation signal based on a first sum signal of the first read signals output from the integrator.
Public/Granted literature
- US20210150319A1 NEUROMORPHIC DEVICE BASED ON MEMORY Public/Granted day:2021-05-20
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