Invention Grant
- Patent Title: Capacitor unit
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Application No.: US17523824Application Date: 2021-11-10
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Publication No.: US11621128B2Publication Date: 2023-04-04
- Inventor: Wei-Yu Lin , Shih-Hao Cheng
- Applicant: Powerchip Semiconductor Manufacturing Corporation
- Applicant Address: TW Hsinchu
- Assignee: Powerchip Semiconductor Manufacturing Corporation
- Current Assignee: Powerchip Semiconductor Manufacturing Corporation
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Priority: TW107139186 20181105
- Main IPC: H01G4/30
- IPC: H01G4/30 ; H05K1/18 ; H05K3/30 ; H01L49/02

Abstract:
A capacitor unit formed by a capacitor integrated structure is provided. The capacitor integrated structure is cut to form capacitor units separated from each other, and each of the capacitor units includes: a substrate; an isolation layer located on the substrate; a capacitor stacked structure located on the isolation layer, wherein the isolation layer electrically isolates the substrate from the capacitor stacked structure; and two electrode connectors located on the capacitor stacked structure and being exposed.
Public/Granted literature
- US20220068568A1 CAPACITOR UNIT Public/Granted day:2022-03-03
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