Invention Grant
- Patent Title: Method of manufacturing semiconductor device, recording medium, and substrate processing apparatus
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Application No.: US17159252Application Date: 2021-01-27
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Publication No.: US11621169B2Publication Date: 2023-04-04
- Inventor: Koei Kuribayashi , Arito Ogawa , Atsuro Seino
- Applicant: KOKUSAI ELECTRIC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Volpe Koenig
- Priority: JPJP2020-013676 20200130
- Main IPC: H01L21/285
- IPC: H01L21/285 ; H01L21/3205 ; H01L21/02 ; H01L21/67 ; C23C16/14 ; C23C16/455 ; C23C16/40

Abstract:
There is provided a technique that includes: (a) supplying a molybdenum-containing gas containing molybdenum and oxygen to a substrate in a process chamber; (b) supplying an additive gas containing hydrogen to the substrate; and (c) supplying a reducing gas containing hydrogen and having a chemical composition different from that of the additive gas to the substrate, wherein at least two of (a), (b), and (c) are performed simultaneously or to partially overlap with each other in time one or more times or (a), (b), and (c) are performed sequentially one or more times to form a molybdenum film on the substrate.
Public/Granted literature
- US20210242026A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, RECORDING MEDIUM, AND SUBSTRATE PROCESSING APPARATUS Public/Granted day:2021-08-05
Information query
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