Invention Grant
- Patent Title: Plasma processing apparatus and calculation method
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Application No.: US16872713Application Date: 2020-05-12
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Publication No.: US11621177B2Publication Date: 2023-04-04
- Inventor: Shinsuke Oka
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Weihrouch IP
- Priority: JPJP2019-090848 20190513
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01J37/32 ; G05D23/19 ; H01L21/683 ; H01L21/3065 ; H05B1/02

Abstract:
A plasma processing apparatus includes a measurement unit that, while controlling a supply power to a heater such that a temperature of the heater becomes constant, measures the supply power to the heater in a non-ignition state where a plasma is not ignited and in a transient state where the supply power to the heater is reduced after the plasma is ignited. The plasma processing apparatus also includes a parameter calculator that calculates a thickness of a top plate by performing a fitting on a calculation model which includes the thickness of the top plate as a parameter and calculates the supply power in the transient state, using the measured supply power in the non-ignition state and the transition state.
Information query
IPC分类: