Invention Grant
- Patent Title: Method for making a bipolar junction transistor having an integrated switchable short
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Application No.: US17804614Application Date: 2022-05-31
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Publication No.: US11621200B2Publication Date: 2023-04-04
- Inventor: Peter Hugh Blair
- Applicant: Peter Hugh Blair
- Applicant Address: GB Manchester
- Assignee: Peter Hugh Blair
- Current Assignee: Peter Hugh Blair
- Current Assignee Address: GB Manchester
- Agent Steven A. Shaw
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L21/8249 ; H01L27/06 ; H01L21/04
Abstract:
This application provides a process for making a circuit of a bipolar junction transistor (BJT). The switchable short in one implementation of the invention is formed in a semiconductor wafer. A collector region is formed in the semiconductor wafer and inside of the collector region, a first base region is formed. An emitter region is formed inside the base region to form the BJT. A drain region is also formed inside the base region adjacent to the emitter region. A gate is formed over a portion of the base region adjacent to the drain region and the emitter region. The gate is connected to the collection region.
Public/Granted literature
- US20220336445A1 Bipolar Junction Transistor Having an Integrated Switchable Short Public/Granted day:2022-10-20
Information query
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