Invention Grant
- Patent Title: Semiconductor device thermal bump
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Application No.: US17404590Application Date: 2021-08-17
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Publication No.: US11621209B2Publication Date: 2023-04-04
- Inventor: Lei Ma , Wenyue Lydia Zhang , Antonino Scuderi , William Clinton Burling Peatman
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated
- Main IPC: H01L23/367
- IPC: H01L23/367 ; H01L27/102 ; H01L23/00
Abstract:
Disclosed is a semiconductor device such as a power amplifier. Unlike conventional power amplifiers, thermal bump is patterned to only cover active devices. In this way, dimensions of the semiconductor device can be reduced.
Public/Granted literature
- US20230054893A1 SEMICONDUCTOR DEVICE THERMAL BUMP Public/Granted day:2023-02-23
Information query
IPC分类:
