Invention Grant
- Patent Title: Substrate structure and semiconductor package structure
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Application No.: US17151062Application Date: 2021-01-15
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Publication No.: US11621217B2Publication Date: 2023-04-04
- Inventor: Chun-Wei Shih , Sheng-Wen Yang , Chung-Hung Lai , Chin-Li Kao
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/498 ; H01L23/31 ; H01L23/538

Abstract:
A substrate structure and a semiconductor package structure are provided. The substrate structure includes a first dielectric layer, a pad and a conductive structure. The first dielectric layer has a first surface and a second surface opposite to the first surface. The pad is adjacent to the first surface and at least partially embedded in the first dielectric layer. The first dielectric layer has an opening exposing the pad, and a width of the opening is less than a width of the pad. The conductive structure is disposed on the pad and composed of a first portion outside the opening of the first dielectric layer and a second portion embedded in the opening of the first dielectric layer. The first portion has an aspect ratio exceeding 1.375.
Public/Granted literature
- US20220230946A1 SUBSTRATE STRUCTURE AND SEMICONDUCTOR PACKAGE STRUCTURE Public/Granted day:2022-07-21
Information query
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