Invention Grant
- Patent Title: Method and apparatus for through silicon die level interconnect
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Application No.: US17178971Application Date: 2021-02-18
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Publication No.: US11621219B2Publication Date: 2023-04-04
- Inventor: Reginald D. Bean , Bret W. Simon
- Applicant: Rockwell Collins, Inc.
- Applicant Address: US IA Cedar Rapids
- Assignee: Rockwell Collins, Inc.
- Current Assignee: Rockwell Collins, Inc.
- Current Assignee Address: US IA Cedar Rapids
- Agency: Suiter Swantz pc llo
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/48 ; H01L23/00 ; H01L25/00 ; H01L25/065

Abstract:
An electronic assembly is disclosed. The electronic assembly includes a primary die, comprising a bulk layer, an integrated circuitry layer, a metal layer, a first redistribution layer, and a first attachment layer. The primary die further includes at least one aligned through-hole in the bulk layer and integrated circuitry layer. The electronic assembly further includes a secondary die physically coupled to the primary die via a second attachment layer. The electronic assembly further includes an interconnect header that includes plurality of interconnect filaments configured to electrically couple the first redistribution layer to one of the at least one metal layer via the at least one bulk layer through-hole and the at least one integrated circuitry through-hole. The interconnect header is generated by applying an electrically conductive filaments on a plurality of wafers, thinning the wafers, stacking and attaching the wafers into a wafer stack, and dicing the wafer stack.
Public/Granted literature
- US20220262715A1 METHOD AND APPARATUS FOR THROUGH SILICON DIE LEVEL INTERCONNECT Public/Granted day:2022-08-18
Information query
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