Electrostatic discharge protection in integrated circuits using positive temperature coefficient material
Abstract:
Disclosed herein are structures, devices, and methods for electrostatic discharge protection (ESDP) in integrated circuits (ICs). In some embodiments, an IC package support may include: a first conductive structure; a second conductive structure; and a material in contact with the first conductive structure and the second conductive structure, wherein the material includes a positive temperature coefficient material.
Information query
Patent Agency Ranking
0/0