Invention Grant
- Patent Title: Semiconductor device having a diode formed in a first trench and a bidirectional zener diode formed in a second trench
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Application No.: US16425568Application Date: 2019-05-29
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Publication No.: US11621279B2Publication Date: 2023-04-04
- Inventor: Ryuta Yaginuma
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agent Gregory M. Howison
- Priority: JPJP2018-106164 20180601
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/762 ; H01L23/50 ; H01L21/84 ; H01L29/866 ; H01L29/66
Abstract:
A semiconductor device includes a semiconductor layer, a transistor cell portion, formed in the semiconductor layer, a first trench, formed in the semiconductor layer, a diode, electrically separated from the transistor cell portion and having a first conductivity type portion and a second conductivity type portion disposed inside the first trench, a second trench, formed in the semiconductor layer, and a bidirectional Zener diode, electrically connected to the transistor cell portion and having a pair of first conductivity type portions, disposed inside the second trench, and at least one second conductivity type portion, formed between the pair of first conductivity type portion.
Information query
IPC分类:
