Invention Grant
- Patent Title: Semiconductor device structure with magnetic element covered by polymer material
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Application No.: US17402889Application Date: 2021-08-16
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Publication No.: US11621317B2Publication Date: 2023-04-04
- Inventor: Chi-Cheng Chen , Wei-Li Huang , Chun-Yi Wu , Kuang-Yi Wu , Hon-Lin Huang , Chih-Hung Su , Chin-Yu Ku , Chen-Shien Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L49/02 ; H01F41/04 ; H01L23/00 ; H01L21/768 ; H01L23/31 ; H01L23/532
Abstract:
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The semiconductor device structure also includes an isolation layer covering the magnetic element and a portion of the semiconductor substrate. The isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding edges of the magnetic element.
Public/Granted literature
- US20210376054A1 SEMICONDUCTOR DEVICE STRUCTURE WITH MAGNETIC ELEMENT Public/Granted day:2021-12-02
Information query
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