Systems and methods of fabricating gate electrode on trenched bottom electrode based molecular spintronics device
Abstract:
A system and method comprising the steps of: depositing a first electrode metal on an insulating substrate or layer; creating a trench component, in which said trench component comprises a section of said first electrode metal or both first electrode metal and insulating substrate or layer with a depth based on at least one of, a molecular device element, a trenched bottom electrode, and a liftoff molecular device (TBELMD) to be produced; insulating said first electrode metal from a predetermined material deposited in said trench component; and depositing a second electrode metal on said predetermined material deposited in said trench component.
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