Invention Grant
- Patent Title: Systems and methods of fabricating gate electrode on trenched bottom electrode based molecular spintronics device
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Application No.: US17033552Application Date: 2020-09-25
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Publication No.: US11621345B2Publication Date: 2023-04-04
- Inventor: Pawan Tyagi
- Applicant: Pawan Tyagi
- Applicant Address: US MD Derwood
- Assignee: Pawan Tyagi
- Current Assignee: Pawan Tyagi
- Current Assignee Address: US MD Derwood
- Agency: Bay Area IP Group, LLC
- Agent Ariel S. Bentolila
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/40 ; G01N27/327 ; G01N27/414 ; B82Y10/00 ; G11C11/16 ; G11C13/00

Abstract:
A system and method comprising the steps of: depositing a first electrode metal on an insulating substrate or layer; creating a trench component, in which said trench component comprises a section of said first electrode metal or both first electrode metal and insulating substrate or layer with a depth based on at least one of, a molecular device element, a trenched bottom electrode, and a liftoff molecular device (TBELMD) to be produced; insulating said first electrode metal from a predetermined material deposited in said trench component; and depositing a second electrode metal on said predetermined material deposited in said trench component.
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