Invention Grant
- Patent Title: Vertical metal oxide semiconductor field effect transistor (MOSFET) and a method of forming the same
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Application No.: US16611888Application Date: 2018-05-08
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Publication No.: US11621346B2Publication Date: 2023-04-04
- Inventor: Lars-Erik Wernersson , Olli-Pekka Kilpi
- Applicant: C2Amps AB
- Applicant Address: SE Limhamn
- Assignee: C2Amps AB
- Current Assignee: C2Amps AB
- Current Assignee Address: SE Limhamn
- Agency: Brundidge & Stanger, P.C.
- Priority: SE1750587-6 20170512
- International Application: PCT/EP2018/061876 WO 20180508
- International Announcement: WO2018/206582 WO 20181115
- Main IPC: H01L29/775
- IPC: H01L29/775 ; H01L21/02 ; H01L21/765 ; H01L29/06 ; H01L29/40 ; H01L29/423 ; H01L29/66 ; H01L29/786
Abstract:
A vertical metal oxide semiconductor field effect transistor (MOSFET) and a method for forming a vertical MOSFET is presented. The MOSFET comprises: a top contact; a bottom contact; a nanowire (602) forming a charge transport channel between the top contact and the bottom contact; and a wrap-around gate (650) enclosing the nanowire (602) circumference, the wrap-around gate (650) having an extension spanning over a portion of the nanowire (602) in a longitudinal direction of the nanowire (602), wherein the wrap-around gate (650) comprises a gate portion (614) and a field plate portion (616) for controlling a charge transport in the charge transport channel, and wherein the field plate portion (616) is arranged at a first radial distance (636) from the center of the nanowire (602) and the gate portion (614) is arranged at a second radial distance (634) from the center of the nanowire (602); characterized in that the first radial distance (636) is larger than the second radial distance (634).
Public/Granted literature
- US20210280700A1 A Vertical Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and a Method of Forming the Same Public/Granted day:2021-09-09
Information query
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