Invention Grant
- Patent Title: Drain extended transistor with trench gate
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Application No.: US16945313Application Date: 2020-07-31
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Publication No.: US11621347B2Publication Date: 2023-04-04
- Inventor: Christopher Boguslaw Kocon
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Gamer; Frank D. Cimino
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/225 ; H01L29/08 ; H01L29/10 ; H01L21/762 ; H01L29/423
Abstract:
A semiconductor device includes a semiconductor substrate with a trench, a body region under the trench with majority carrier dopants of a first type, and a transistor, including a source region under the trench with majority carrier dopants of a second type, a drain region spaced from the trench with majority carrier dopants of the second type, a gate structure in the trench proximate a channel portion of a body region, and an oxide structure in the trench proximate a side of the gate structure.
Information query
IPC分类:
